KDV142E
KDV142E is Silicon Diode manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. Features
Low Capacitance : CT=0.35[p F] (Max.) Low Series resistance : r S=1.5[ Small Package : ESC. ] (Max.).
CATHODE MARK
C 1
SILICON EPITAXIAL PIN TYPE DIODE
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V m A
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability
- - Failure cirterion : IR>100n A at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10m A VR=1V, f=1MHz IF=10m A, f=100MHz C=200p F, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.35 1.3 V UNIT A V p F
2003. 10. 24 ..net
Revision No : 0
1/2
10 FORWARD CURRENT I F (A) 10 10 10 10 10
-2
- VF
10 REVERSE CURRENT IR (A)
-11
-...
