KEC KDV142E
Silicon Diode
FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.). CATHODE MARK C 1 KDV142E SILICON EPITAXIAL PIN TYPE DIODE E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC Marking Type Name E FELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.35 1.3 V UNIT A V pF 2003. 10. 24 Revision No : 0 1/2 KDV142E IF 10 FORWARD CURRENT I F (A) 10 10 10 10 10 -2 - VF 10 REVERSE CURRENT IR (A) -...