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SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.).
CATHODE MARK
C 1
KDV142E
SILICON EPITAXIAL PIN TYPE DIODE
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 +
ESC
Marking
Type Name
E F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V.