KDV175E - Silicon Diode

KEC

Key Features

Low Capacitance : CT=0.25[pF] (Typ. ) Low Series resistance : rS=7[ ] (Typ. ). Designed for low Inter Modulation. Small Package : ESC. KDV175E.

KDV175E silicon diode by KEC - Datasheet Preview

Datasheet Details

Part number	KDV175E
Manufacturer	KEC
File Size	453.43 KB
Description	Silicon Diode
Datasheet	KDV175E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VHF UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. FEATURES Low Capacitance : CT=0.25[pF] (Typ.) Low Series resistance : rS=7[ ] (Typ.). Designed for low Inter Modulation. Small Package : ESC. KDV175E SILICON EPITAXIAL PIN TYPE DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current VR IF Junction Temperature Tj Storage Temperature Range Tstg RATING 50 50 150 -55 150 UNIT V mA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Forward Voltage Total Capacitance VR IR VF CT Series Resistance rs TEST CONDITION IR=10 A VR=50V VF=50mA VR=50V, f=1MHz IF=10mA, f=100MHz MIN. 50 - TYP. - 0.95 0.25 7.0 MAX. 0.1 - UNIT V A V pF 2014. 3.