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KDV240E - VARIABLE CAPACITANCE DIODE

Download the KDV240E datasheet PDF. This datasheet also covers the KDV245E variant, as both devices belong to the same variable capacitance diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min. ) Excellent C-V Characteristics, and Small Tracking Error.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KDV245E-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KDV240E
Manufacturer KEC
File Size 356.94 KB
Description VARIABLE CAPACITANCE DIODE
Datasheet download datasheet KDV240E Datasheet

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Other Datasheets by KEC

Part Number Description
KDV240E Silicon Diode
KDV240 VARIABLE CAPACITANCE DIODE
KDV245 VARIABLE CAPACITANCE DIODE
KDV202E SILICON EPITAXIAL PLANAR DIODE
KDV214 VARIABLE CAPACITANCE DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA ANTENNA TUNNING APPLICATION FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min.) Excellent C-V Characteristics, and Small Tracking Error. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 10 125 -55 125 UNIT V KDV240E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Marking Type Name TL ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio IR C0.5V C1.5V C3V C0.5V/C3V Series Resistance rS TEST CONDITION VR=22V VR=0.