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KDV262 - VARIABLE CAPACITANCE DIODE

Features

  • High Capacitance Ratio : C2V/C25V=12.5(Typ. ) Low Series Resistance : rS=0.6 (Typ. ) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. KDV262.

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Datasheet Details

Part number KDV262
Manufacturer KEC
File Size 535.52 KB
Description VARIABLE CAPACITANCE DIODE
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA CATV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=12.5(Typ.) Low Series Resistance : rS=0.6 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Peak Reverse Voltage Junction Temperature VR 34 V VRM 36 (RL=10k ) V Tj 125 Storage Temperature Range Tstg -55 125 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio VR IR C2V C25V C2V/C25V C25V/C28V Series Resistance rS Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.
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