The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 (Max.) Good C-V Linearity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 15 150
-55 150
UNIT V
KDV386S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
C N K J
A G H
D
E L BL
23 1
Q PP
M
1. NC 2. ANODE 3. CATHODE
DIM A B C D E G H J K L M N P Q
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.40+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX
3
21
SOT-23
Marking
V BType Name
Lot No.
KDV386S Datasheet
