KDZ100V Datasheet PDF

FEATURES

hSmall Package : USC hSharp breakdown characteristic. hSuffix U : Qualified to AEC-Q101. ex) KDZ100V-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING Power Dissipation PD * 200 Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 Operating Temperature Topr -55q150 * Mounted on a glass epoxy circuit board of 20ƒ20ɘ, pad dimension of 4ƒ4ɘ. UNIT mW    CATHODE MARK E A K F L KDZ100V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE B 1 2 D M M 1. ANODE 2. CATHODE G H J C I DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6 USC Marking Lot No. AQ Type Name

ELECTRICAL CHARACTERISTICS

(Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION Zener Voltage (Note1) VZ IZ=1mA Dynamic Impedan (Note2) ZZ IZ=1mA Reverse Current IR VR=76V (Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal. MIN. 95. 0 - TYP. - MAX.