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KF10N50FZ - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF10N50FZ datasheet PDF. This datasheet also covers the KF10N50P variant, as both devices belong to the same n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Key Features

  • VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ. )= 19.5nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF10N50P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF10N50FZ
Manufacturer KEC
File Size 73.02 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF10N50FZ Datasheet

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Other Datasheets by KEC

Part Number Description
KF10N50F N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N50P N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N50PZ N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF10N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KF10N50P/F/PZ/FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.