GENERAL DESCRIPTION
FEATURES
VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF10N50P KF10N50F UNIT KF10N50PZ KF10N50FZ Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 10 10* 5 5* 25 25* 300 14.7 4.5 A mJ mJ V/ns Drain Power Dissipation Tc=25 Derate above 25 PD 130 1.04 41.5 W 0.33 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.96 62.5 3.0 /W 62.5 /W * : Drain current limited by maximum junction temperature. Q K KF10N50P,KF10N50PZ A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_...
KEC
