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KF11N50F - N-Channel MOSFET

Download the KF11N50F datasheet PDF. This datasheet also covers the KF11N50P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ. ) = 26nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF11N50P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF11N50F
Manufacturer KEC
File Size 859.52 KB
Description N-Channel MOSFET
Datasheet download datasheet KF11N50F Datasheet

Full PDF Text Transcription for KF11N50F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KF11N50F. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and...

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s, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF11N50P KF11N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 11 11* 7 7* 33 33* 400 6.6 4.