KF11N50F
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26n C
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF11N50P KF11N50F
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR dv/dt
11 11- 7 7- 33 33-
Drain Power Dissipation
Tc=25 Derate above 25
178 1.43
46.3 0.37
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to Ambient
Rth JC Rth JA
0.7 62.5
2.7...
