Datasheet4U Logo Datasheet4U.com

KF12N60P - N-channel MOSFET

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ. )= 36nC.

📥 Download Datasheet

Datasheet preview – KF12N60P

Datasheet Details

Part number KF12N60P
Manufacturer KEC semiconductor
File Size 396.31 KB
Description N-channel MOSFET
Datasheet download datasheet KF12N60P Datasheet
Additional preview pages of the KF12N60P datasheet.

📁 Similar Datasheet

  • KF12 - VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT (STMicroelectronics)
  • KF120 - VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT (STMicroelectronics)
  • KF124 - Transistor (Tesla Elektronicke)
  • KF125 - Transistor (Tesla Elektronicke)
  • KF13003A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (KINDFAIRY)
  • KF15 - VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT (STMicroelectronics)
  • KF1502-GT10A - Compact low voltage thick film Thermal printhead (Rohm)
  • KF1502-GT20A - Compact low voltage thick film Thermal printhead (Rohm)
  • KF15B - Very low drop voltage regulators (STMicroelectronics)
Other Datasheets by KEC
  • KF12N60F - N-channel MOSFET
  • KF12N68F - N-Channel MOSFET
  • KF10N50F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF10N50FZ - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF10N50P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF10N50PZ - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF10N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF10N60P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF12N60P KF12N60F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 V V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 12 12* 7.4 7.
Published: |