GENERAL DESCRIPTION
FEATURES
VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF13N50P KF13N50F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 V 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 13 13* 8 8* 40 40* 860 19.5 4.5 208 49.8 1.66 0.4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 0.6 62.5 2.51 /W 62.5 /W * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT D Q KF13N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF13N50P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K...
KEC
