KEC KF13N60N
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.| Part No. | KF13N60N |
|---|---|
| Datasheet | KF13N60N Download |
| Manufacturer |  KEC |
| Description | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
H KF13N60N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B KFEATURES
VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID (Note1) (Note 2) (Note 1) (Note 3) IDP EAS EAR dv/dt PD Tj Tstg RATING 600 30 13 A 32 870 22.5 4.5 215 1.72 150 -55 150 mJ mJ V/ns W W/ UNIT V V 1. Gate 2. Drain 3. Source DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T F C J I G TO-3P(N)-E Derate abo...
