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KF16N50F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF16N50F datasheet PDF. This datasheet also covers the KF16N50P variant, as both devices belong to the same n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Key Features

  • VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ. )= 40.8nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF16N50P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF16N50F
Manufacturer KEC
File Size 75.93 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF16N50F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KF16N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF16N50P KF16N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 16 16* 9.7 9.