GENERAL DESCRIPTION
FEATURES
VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF16N50P KF16N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 16 16* 9.7 9.7* 45 45* 870 22.5 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 225 1.78 51 0.41 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.58 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.43 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W Q K KF16N50P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0...
KEC
