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KF16N50F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KF16N50F, a member of the KF16N50P N-CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ. )= 40.8nC.

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Datasheet preview – KF16N50F

Datasheet Details

Part number KF16N50F
Manufacturer KEC semiconductor
File Size 75.93 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF16N50F Datasheet
Additional preview pages of the KF16N50F datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF16N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF16N50P KF16N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 16 16* 9.7 9.
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