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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies.
FEATURES VDSS(Min.)= 400V, ID= 2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
400
Gate-Source Voltage
VGSS
30
Drain Current
@TC=25 @TC=100
2* ID
1.2*
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR dv/dt
6* 52 0.2 4.5
Drain Power Dissipation
TA=25 Derate above25
PD
2** 0.