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KF3N50DS - N-Channel MOSFET

Download the KF3N50DS datasheet PDF. This datasheet also covers the KF3N50DZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50DS) trr(typ) = 300ns (KF3N50DZ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF3N50DZ-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF3N50DS
Manufacturer KEC
File Size 380.23 KB
Description N-Channel MOSFET
Datasheet download datasheet KF3N50DS Datasheet

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Other Datasheets by KEC

Part Number Description
KF3N50DZ N-Channel MOSFET
KF3N50DZ N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50FS N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50FZ N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50IZ N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KF3N50DZ/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.