KF3N50FZ Datasheet PDF

KEC KF3N50FZ

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Part No.	KF3N50FZ
Datasheet	KF3N50FZ Download
Manufacturer	KEC
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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GENERAL DESCRIPTION

FEATURES

VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50FS) trr(typ) = 300ns (KF3N50FZ) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain Current limited by maximum junction temperature PIN CONNECTION (KF3N50FZ/FS) D RATING 500 30 3* 1.8* 9* 110 4 10 25 0.2 150 -55 150 5.0 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12...