Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
General Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
MILLIMETERS
Features
VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ.)= 17nC @VGS=10V
1. GATE 2. DRAIN 3. SOURCE
A B C D E F G H J K L M N O Q R
_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1...