GENERAL DESCRIPTION
FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 500 30 5.0* 2.9* 13* 270 UNIT V V A mJ mJ V/ns W W/ 8.6 20 37.9 0.30 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.3 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 8. 25 Revision No : 0 1/6 Datasheet pdf - KF5N50FZA/FSA ELECTRICAL CHARACTERISTICS
(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN.