Datasheet4U Logo Datasheet4U.com

KF5N50FSA - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N.

📥 Download Datasheet

Datasheet preview – KF5N50FSA

Datasheet Details

Part number KF5N50FSA
Manufacturer KEC
File Size 779.11 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF5N50FSA Datasheet
Additional preview pages of the KF5N50FSA datasheet.

📁 Similar Datasheet

  • KF5N53FS - N-Channel 650V Power MOSFET (VBsemi)
  • KF50 - VERY LOW DROP VOLTAGE REGULATORS (STMicroelectronics)
  • KF503 - NPN Transistors (Tesla Elektronicke)
  • KF504 - NPN Transistors (Tesla Elektronicke)
  • KF506 - NPN Transistors (Tesla Elektronicke)
  • KF507 - NPN Transistors (Tesla Elektronicke)
  • KF508 - NPN Transistors (Tesla Elektronicke)
  • KF509 - NPN Transistors (Tesla Elektronicke)
  • KF50BD-TR - Very low drop voltage regulators (STMicroelectronics)
  • KF50BDT-TR - Very low drop voltage regulators (STMicroelectronics)
Other Datasheets by KEC
  • KF5N50FS - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50FPS - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50FR - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50FZ - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50FZA - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50D - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF5N50DR - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.
Published: |