GENERAL DESCRIPTION
FEATURES
VDSS= 525V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 Qg(typ) = 12nC trr(typ) = 150ns @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 525 30 5.0* 2.9* 13* 270 8.6 20 37.9 0.30 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.3 62.5 * : Drain current limited by maximum junction temperature. PIN CONNECTION UNIT V V A mJ mJ V/ns W W/ /W /W KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR 2012. 3. 29 Revision No : 0 1/6 KF5N53FS ELECTRICAL CHARACTERISTICS
(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown...
KEC
