GENERAL DESCRIPTION
FEATURES
VDSS= 650V, ID= 5A Drain-Source ON Resistance : RDS(ON)=1.75 Qg(typ) = 14.5nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF5N65P KF5N65F Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 5 5* 3.0 3.0* 15 150 A mJ 3.8 mJ 4.5 100 41.7 0.8 0.33 V/ns W W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 /W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 /W PIN CONNECTION D Q KF5N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN KF5N65P O C F G B Q L J P H 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +...
KEC
