KF60N06P
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switching mode power supplies. FEATURES
VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48n C
N CHANNEL MOS FIELD EFFECT TRANSISTOR
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
I K M L J H P
F G H I J K L M N O
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 +
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25¡ Drain Current @TC=100¡ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery...
