Datasheet4U Logo Datasheet4U.com

KF6N60F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KF6N60F, a member of the KF6N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ. ) =16nC.

📥 Download Datasheet

Datasheet preview – KF6N60F

Datasheet Details

Part number KF6N60F
Manufacturer KEC
File Size 1.48 MB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF6N60F Datasheet
Additional preview pages of the KF6N60F datasheet.

📁 Similar Datasheet

  • KF60 - VERY LOW DROP VOLTAGE REGULATORS (STMicroelectronics)
  • KF621 - Transistor (Tesla Elektronicke)
  • KF622 - Transistor (Tesla Elektronicke)
  • KF630D - Transistor (Tesla Elektronicke)
  • KF630S - Transistor (Tesla Elektronicke)
Other Datasheets by KEC
  • KF6N60D - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF6N60I - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF6N60P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF6N70F - N-Channel MOSFET
  • KF6N70I - N-Channel MOSFET
  • KF60N06P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF6N60P KF6N60F 600 30 6 6* 3.8 3.8* IDP 15 15* EAS 180 EAR 4 dv/dt 4.5 100 41.7 PD 0.8 0.
Published: |