KF6N60F Datasheet PDF

KEC KF6N60F

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Part No.	KF6N60F
Datasheet	KF6N60F Download
Manufacturer	KEC
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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GENERAL DESCRIPTION

FEATURES

VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF6N60P KF6N60F 600 30 6 6* 3.8 3.8* IDP 15 15* EAS 180 EAR 4 dv/dt 4.5 100 41.7 PD 0.8 0.33 Maximum Junction Temperature Storage Temperature Range Tj Tstg 150 -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.25 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 3.0 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION KF6N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60P KF6N60F 2011. 6. 30 Revision No : 0 1/2 KF6N60P/F

ELECTRICAL CHARACTERISTICS

(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Dra...