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KF70N06P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications

Features

  • VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max. ) @VGS = 10V MOSFET.

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Datasheet preview – KF70N06P

Datasheet Details

Part number KF70N06P
Manufacturer KEC Corporation
File Size 89.80 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF70N06P Datasheet
Additional preview pages of the KF70N06P datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF70N06P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC RATING SYMBOL UNIT KF70N06P KF70N06F Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS 20 Drain Current @TC=25 @TC=100 70 ID* 44 41 25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP EAS EAR dv/dt 240 196 480 12 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 125 1.0 43 0.
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