GENERAL DESCRIPTION
FEATURES
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF7N65P KF7N65F Drain-Source Voltage VDSS 650 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 7 7* 4.2 4.2* 18 18* 212 1.6 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 160 1.28 52 0.42 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 Thermal Resistance, Case-to-Sink RthCS 0.5 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W /W PIN CONNECTION D Q K KF7N65P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.
KEC
