Datasheet4U Logo Datasheet4U.com

KF7N68F - N-Channel MOSFET

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=680V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.25 @VGS=10V Qg(typ. )= 24nC.

📥 Download Datasheet

Datasheet preview – KF7N68F

Datasheet Details

Part number KF7N68F
Manufacturer KEC Corporation
File Size 380.85 KB
Description N-Channel MOSFET
Datasheet download datasheet KF7N68F Datasheet
Additional preview pages of the KF7N68F datasheet.

📁 Similar Datasheet

  • KF7N65F - N-Channel Power MOSFET (VBsemi)
  • KF7N65FM - N-Channel 650V Power MOSFET (VBsemi)
  • KF776 - NPN Bipolar RF Transistor (Kexin)
Other Datasheets by KEC
  • KF7N60F - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF7N60P - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF7N65F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF7N65FM - N-Channel MOSFET
  • KF7N65P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF7N50D - N CHANNEL MOS FIELD EFFECT TRANSISTOR
  • KF7N50F - N-Channel MOSFET
  • KF7N50I - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA KF7N68F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=680V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.25 @VGS=10V Qg(typ.
Published: |