GENERAL DESCRIPTION
FEATURES
VDSS=800V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.45 @VGS=10V Qg(typ.)= 45nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF7N80P KF7N80F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 7 7* 4.4 4.4* 20 20* 360 11 4.5 160 44.6 1.28 0.36 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 0.78 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.8 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D Q KF7N80P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.
KEC
