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KF7N80P - N-Channel MOSFET

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=800V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.45 @VGS=10V Qg(typ. )= 45nC.

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SEMICONDUCTOR TECHNICAL DATA KF7N80P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=800V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.45 @VGS=10V Qg(typ.
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