KEC KF80N08F
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
| Part No. | KF80N08F |
|---|---|
| Datasheet | KF80N08F Download |
| Manufacturer |  KEC |
| Description | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applicationsFEATURES
VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=10m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF80N08P KF80N08F Drain-Source Voltage VDSS 75 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 80 56 76 39 320 224 1200 18 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 230 1.54 62.5 0.42 Maximum Junction Temperature Tj 175 Storage Temperature Range Tstg -55 175 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.65 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.4 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W Q K KF80N08P A E I K M D NN F G B Q L J O C P H 123 1.
