KF8N60P
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24n C
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF8N60P KF8N60F
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR dv/dt
8 8- 5 5- 20 20-
Drain Power Dissipation
Tc=25 Derate above 25
154 1.23
50 0.4
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case Rth JC
Thermal Resistance, Junction-to-Ambient
Rth...
