GENERAL DESCRIPTION
FEATURES
VDSS(Min.)= 400V, ID= 6.5A Drain-Source ON Resistance : RDS(ON)=0.83 Qg(typ.) =13 nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 400 30 6.5 4.1 18* 140 3.9 4.5 78 0.63 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 1.6 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W KF9N40D N CHANNEL MOS FIELD EFFECT TRANSISTOR A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1.
KEC
