GENERAL DESCRIPTION
FEATURES
VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V KF9N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N50P DIM MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD 125 1.0 150 -55 150 9 5.5 24 200 4 4.5 44.6 0.36 RATING KF9N50P 500 30 9* 5.5* 24* mJ mJ V/ns W W/ A KF9N50F UNIT V V KF9N50F Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 1.0 62.5 2.8 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 12. 20 Revision No : 0 1/2 Free Datasheet KF9N50P/F ELECTRICAL CHARACTERISTICS
(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN.
KEC
