KHB5D0N50P
Description
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21n C
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 +
MAXIMUM RATING (Tc=25 ..
CHARACTERISTIC
)
RATING SYMBOL KHB5D0N50F UNIT KHB5D0N50P KHB5D0N50F2 500 30 5.0 ID 2.9 IDP EAS EAR dv/dt 73 PD 0.74 Tj Tstg 150 -55 150 0.3 W/ 20 390 9.2 3.5 38 2.9- 20- m J m J V/ns W
Q 1 2 3
1. GATE 2. DRAIN 3. SOURCE
TO-220AB
KHB5D0N50F
Drain-Source Voltage...
