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KHB9D0N90NA - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ. ) @VGS =10V Qg(typ. ) =54nC.

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Datasheet Details

Part number KHB9D0N90NA
Manufacturer KEC
File Size 608.62 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB9D0N90NA Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.
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