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SEMICONDUCTOR
TECHNICAL DATA
General Description It s mainly suitable for use as a load switch in battery powered applications.
KMA2D4P20SA
P-Ch Trench MOSFET
FEATURES VDSS=-20V, ID=-2.4A. Drain to Source on-state Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. : RDS(ON)=175m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
12 V
Drain Current
DC@Ta=25 (Note1) ID -2.4
A
Pulsed
(Note1)
IDP
-9
Ta=25 Drain Power Dissipation
Ta=100
(Note1) (Note1)
1.25 PD W
0.6
Maximum Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
Thermal Resistance, Junction to Ambient (Note1) RthJA Note1)Surface Mounted on 1 1 FR4 Board, t 5sec.
100
/W
E L BL
DIM MILLIMETERS A 2.93+_ 0.
KMA2D4P20SA Datasheet
