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KMA3D6N20SA - N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment.

Key Features

  • VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=4.5V RDS(ON)=65m (Max. ) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM.

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Datasheet Details

Part number KMA3D6N20SA
Manufacturer KEC
File Size 697.35 KB
Description N-Channel MOSFET
Datasheet download datasheet KMA3D6N20SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.