Datasheet4U Logo Datasheet4U.com

KMB014P30QA - Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for portable for portable equipment and SMPS.

Key Features

  • VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max. ) @ VGS=-10V RDS(ON)=18m (Max. ) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25.

📥 Download Datasheet

Datasheet Details

Part number KMB014P30QA
Manufacturer KEC
File Size 491.59 KB
Description Trench MOSFET
Datasheet download datasheet KMB014P30QA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KMB110F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Kexin
KMB12F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB14F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate
KMB16F SCHOTTKY SURFACE MOUNT FLAT BRIDGE RECTIFIER Sunmate

Other Datasheets by KEC

Part Number Description
KMB010P30QA P-Channel Trench MOSFET
KMB012N30QA N-Channel Trench MOSFET
KMB030N30D N-Channel Trench MOSFET
KMB035N40DB N-Channel Trench MOSFET
KMB035N40DC N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB014P30QA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max.) @ VGS=-10V RDS(ON)=18m (Max.) @ VGS=-4.