KMB035N40DB
Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FEATURES
VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max.) @ VGS=10V : RDS(ON)=17.0m (Max.) @ VGS=4.5V
A CD
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O Max 0.1
MAXIMUM RATING (
)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage Gate to Source Voltage
VDSS VGSS
40 V 20 V
Drain Current
DC@TC=25 Pulsed
(Note1) (Note2)
ID IDP
35 A
@TC=25 Drain Power Dissipation
@Ta=25
(Note1) (Note2)
43 W
Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case
(Note1)
Tj Tstg Rth JC
150 -55...
