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KMB050N60P - N-Channel MOSFET

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ. ) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB050N60P N.

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Datasheet Details

Part number KMB050N60P
Manufacturer KEC
File Size 431.19 KB
Description N-Channel MOSFET
Datasheet download datasheet KMB050N60P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies. FEATURES VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB050N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.05 1.