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KMB4D5DN60QA - Dual N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.

It is mainly suitable for load switch and Back light inverter.

Key Features

  • VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max. ) @ VGS=10V RDS(ON)=77m (Max. ) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted).

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Datasheet Details

Part number KMB4D5DN60QA
Manufacturer KEC
File Size 49.96 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMB4D5DN60QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. FEATURES VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 60 20 4.