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KMB6D0DN35QB - Dual N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converters.

Features

  • VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual N-Ch Trench MOSFET.

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Datasheet preview – KMB6D0DN35QB

Datasheet Details

Part number KMB6D0DN35QB
Manufacturer KEC
File Size 894.56 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMB6D0DN35QB Datasheet
Additional preview pages of the KMB6D0DN35QB datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.
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