KMB6D0DN35QB - Dual N-Channel MOSFET

Product Overview

KEC

KMB6D0DN35QB Dual N-Channel MOSFET by KEC - Datasheet Preview — Datasheet preview – KMB6D0DN35QB

Datasheet Details

Part number	KMB6D0DN35QB
Manufacturer	KEC
File Size	894.56 KB
Description	Dual N-Channel MOSFET
Datasheet	KMB6D0DN35QB Datasheet
Additional preview pages of the KMB6D0DN35QB datasheet.

Product details

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max. ) @VGS=10V RDS(ON)=42m (Max. ) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual N-Ch Trench MOSFET.

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Published: Jun 21, 2016 |