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KMB7D0DN40QB - Dual N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for power management in PC, portable equipment and battery powered systems.

Key Features

  • VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max. ) @VGS=10V RDS(ON)=45m (Max. ) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted).

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Datasheet Details

Part number KMB7D0DN40QB
Manufacturer KEC
File Size 831.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMB7D0DN40QB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable equipment and battery powered systems. FEATURES VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current Ta=25 (Note1) Pulsed VDSS VGSS ID IDP 40 V 20 V 7A 36 A Drain to Source Diode Forward Current IS 7 A Ta=25 (Note1) Drain Power Dissipation Ta=100 (Note1) Maximum Junction Temperature Storage Temperature Range 2W PD 1.