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KMD6D0DN40Q - Dual N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converters.

Features

  • VDSS=40V, ID=6A. Drain-Source ON Resistance. RDS(ON)=38m (Max. ) @VGS=10V RDS(ON)=50m (Max. ) @VGS=4.5V Super High Dense Cell Design Very fast switching.

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Datasheet preview – KMD6D0DN40Q

Datasheet Details

Part number KMD6D0DN40Q
Manufacturer KEC
File Size 369.97 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet KMD6D0DN40Q Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES VDSS=40V, ID=6A. Drain-Source ON Resistance. RDS(ON)=38m (Max.) @VGS=10V RDS(ON)=50m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current Ta=25 Pulsed(Note1) Peak Diode Recovery dv/dt (Note 2) VDSS VGSS ID * IDP dv/dt 40 V 12 V 6A 24 A 4.
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