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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
FEATURES
VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance
: RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7
@ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V
KML0D3P20V
P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC @TA=25 DC @TA=85 Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
VDSS VGSS
ID*
IDP IS PD* Tj Tstg RthJA*
Note 1) *Surface Mounted on FR4 Board, t 5sec
P-Ch -20
6 -300 -210 -650 125 150 150 -55 150 446
UNIT V V
mA
mW
/W
2014. 8.
KML0D3P20V Datasheet
