Datasheet4U Logo Datasheet4U.com

KML0D3P20V - P-Channel MOSFET

General Description

It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.

Key Features

  • VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7 @ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V KML0D3P20V P-Ch Trench MOSFET.

📥 Download Datasheet

Datasheet Details

Part number KML0D3P20V
Manufacturer KEC
File Size 782.10 KB
Description P-Channel MOSFET
Datasheet download datasheet KML0D3P20V Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KML111 STEP MOTOR Superior Electric
KML112 STEP MOTOR Superior Electric
KML113 STEP MOTOR Superior Electric
KML61 STEP MOTOR Superior Electric
KML62 STEP MOTOR Superior Electric

Other Datasheets by KEC

Part Number Description
KML0D3P20TV P-Ch Trench MOSFET
KML0D4N20E N-Channel MOSFET
KML0D4N20V N-Channel MOSFET
KML0D4P20E P-Channel MOSFET
KML0D6NP20EA N and P-Ch Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7 @ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V KML0D3P20V P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient VDSS VGSS ID* IDP IS PD* Tj Tstg RthJA* Note 1) *Surface Mounted on FR4 Board, t 5sec P-Ch -20 6 -300 -210 -650 125 150 150 -55 150 446 UNIT V V mA mW /W 2014. 8.