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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter.
FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS
20
V
VGSS
6V
Drain Current
DC @TA=25 DC @TA=85 Pulsed
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
(Note 1) (Note 1)
ID
400 330 mA
(Note 1) IDP
1600
(Note 2) PD
210 mW
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Ambient (Note 2) RthJA
600
/W
Note 1) Drain current limited by maximum junction temperature.
KML0D4N20E Datasheet
