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KML0D4N20E - N-Channel MOSFET

General Description

It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter.

Key Features

  • VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design.

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Datasheet Details

Part number KML0D4N20E
Manufacturer KEC
File Size 771.20 KB
Description N-Channel MOSFET
Datasheet download datasheet KML0D4N20E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS 20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) ID 400 330 mA (Note 1) IDP 1600 (Note 2) PD 210 mW Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note 2) RthJA 600 /W Note 1) Drain current limited by maximum junction temperature.