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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design
KML0D4N20V
N-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC @TA=25 DC @TA=85 Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
VDSS VGSS
ID*
IDP IS PD* Tj Tstg
20 6
400 280 650 125 150 150 -55 150
Note 1) *Surface Mounted on 1 1 FR4 Board. t 5 sec
UNIT V V
mA
mW
2014. 8.
KML0D4N20V Datasheet
