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KML0D4N20V - N-Channel MOSFET

General Description

It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.

Key Features

  • VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design KML0D4N20V N-Ch Trench MOSFET.

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Datasheet Details

Part number KML0D4N20V
Manufacturer KEC
File Size 776.40 KB
Description N-Channel MOSFET
Datasheet download datasheet KML0D4N20V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design KML0D4N20V N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch Drain-Source Voltage Gate-Source Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 20 6 400 280 650 125 150 150 -55 150 Note 1) *Surface Mounted on 1 1 FR4 Board. t 5 sec UNIT V V mA mW 2014. 8.