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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. ᴌLow Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ᴌComplementary to the KN2907/2907A.
K D E G N
A
ᴌLow Leakage Current
H
MAXIMUM RATING (Ta=25ᴱ)
KN2222 KN2222A 60 30 5 600 625 150 -55ᴕ150 75 40 6
L
F
F
M
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING
UNIT V V V mA mW ᴱ ᴱ
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.
KN2222 Datasheet
