KEC KRA309E
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
With Built-in Bias Resistors Simplify Circuit Design A G KRA307E~KRA309E EPITAXIAL PLANAR PNP TRANSISTOR E B D 3 2 1 DIM A B C D E G H J H Reduce a Quantity of Parts and Manufacturing Process High Packing Density. MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 + EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRA307E R1(k 10 22 47 ) R2(k 47 47 22 ) J C 1. COMMON (EMITTER) 2. IN (BASE) 3. OUT (COLLECTOR) IN KRA308E KRA309E COMMON(+) ESM MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRA307E 309E VO RATING -50 -30, 6 VI -40, 7 -40, 15 IO KRA307E 309E PD Tj Tstg -100 100 150 -55 150 mA mW V UNIT V CHARACTERISTIC KRA307E Input Voltage KRA308E KRA309E Output Current Power Dissipation Junction Temperature Storage Temperature Range MARK SPEC TYPE MARK KRA307E PH KRA308E PI KRA309E PJ Marking Type Name 2003. 12. 23 Revision No : 1 1/4 KRA307E~KRA309EELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC Output Cut-off Current KRA307E 309E SYMBOL IO(OFF) TEST CONDITION VO=-50V, VI=0 MIN.