KRC112
FEATURES
With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C
R1 B
KRC110~KRC114
EPITAXIAL PLANAR NPN TRANSISTOR
KE G
H FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 50 50 5 100 625 150
-55 150
UNIT V V V m A m W
2009. 2. 25
Revision No : 0
1/4
KRC110~KRC114
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
KRC110
ICBO IEBO h FE VCE(sat) f T
- Rise Time
KRC111 KRC112...
