KEC KRC234S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT R1 B C KRC231S~KRC235S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg MARK SPEC TYPE KRC231S MARK NW KRC232S NY KRC233S NZ KRC234S NNA KRC235S NNB Marking Type Name Lot No. Type Name Lot No. RATING 30 15 5 600 200 150 -55 150 UNIT V V V mA mW 2011. 6. 29 Revision No : 6 1/3 KRC231S~KRC235SELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Breakdo...