KEC KRC663U
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
With Built-in Bias Resistors. A1 KRC660U~KRC664U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 5 Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A 2 3 4 D DIM A A1 B B1 C D G H MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) H C C 5 4 T G T Q1 Q2 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) E 1 2 3 USV MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mWELECTRICAL CHARACTERISTICS
(Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current G...