KEC KRC833U
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
With Built-in Bias Resistors. Simplify Circuit Design. A1 KRC830U~KRC834U EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 6 5 4 D Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. 2 3 DIM A A1 B B1 C D G H MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 A EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) H C C 6 5 4 G T T Q1 Q2 E 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR 1 2 3 US6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mWELECTRICAL CHARACTERISTICS
(Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sa...