KEC KRC836E
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. A1 KRC836E~KRC842E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C OUT R1 R2 TYPE NO. KRC836E R1(k 1 2.2 2.2 4.7 10 47 100 ) R2(k 10 2.2 10 10 4.7 10 100 ) IN KRC837E KRC838E KRC839E COMMON 1. 2. 3. 4. 5. 6. KRC840E KRC841E KRC842E Q1 Q2 Q2 Q2 Q1 Q1 COMMON (EMITTER) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN (BASE) OUT (COLLECTOR) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 J D Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC836E~842E KRC836E KRC837E KRC838E VO 1 2 3 CHARACTERISTIC RATING 50 10, -5 12, -10 12,-5 UNIT V Input Voltage KRC839E KRC840E KRC841E KRC842E VI 20, -7 30, -10 40, -15 40, -10 V Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC83...